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Part Number:IHW30N160R2

Manufacturer : Infineon Technologies

Category :Discrete Semiconductor Products Transistors - IGBTs - Single

Description : IGBT 1600V 60A 312W TO247-3

Detailed Description : IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1

Applications : Inductive Cooking / Soft Switching Applications

Features：

• Powerful monolithic Body Diode with very low forward voltage

• Body diode clamps negative voltages

• Trench and Fieldstop technology for 1600 V applications offers :

 - very tight parameter distribution

 - high ruggedness, temperature stable behavior

• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

• Low EMI

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

Part Number:BCM857BV

Manufacturer : Nexperia USA Inc.

Category :Discrete Semiconductor Products Transistors - Bipolar (BJT) - Arrays

Description : TRANS 2PNP 45V 0.1A SOT666

Detailed Description : Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 45V 100mA 175MHz 300mW Surface Mount SOT-666

Features:

• Current gain matching

• Base-emitter voltage matching

• Drop-in replacement for standard double transistors

Applications:

•Current mirror

• Differential amplifier

Part Number:PMEG4010AESBYL

Manufacturer : Nexperia USA Inc.

Category :Discrete Semiconductor Products Diodes - Rectifiers - Single

Description : DIODE SCHOTTKY 40V 1A SOD993

Detailed Description :Diode Schottky 40 V 1A Surface Mount DSN1006-2

Applications:

• Low voltage rectification

• High efficiency DC-to-DC conversion

• Switch mode power supply

• Low power consumption applications

• Ultra high-speed switching

• LED backlight for mobile application

General description:Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package.

Features and benefits:

• Average forward current: IF(AV) ≤ 1 A

• Reverse voltage: VR ≤ 40 V

• Low forward voltage, typical: VF = 435 mV

• Low reverse current, typical: IR = 325 µA

• Package height typ. 270 µm

Part Number:FGA20S140P

Manufacturer : FAIRCHILD

Category : Discrete Semiconductor Products Transistors - IGBTs - Single

Description : INSULATED GATE BIPOLAR TRANSISTO

Detailed Description: IGBT Trench Field Stop 1400 V 40 A 272 W Through Hole TO-3PN

Applications:Induction Heating, Microwave Oven

Features :

• High Speed Switching

• Low Saturation Voltage: VCE(sat) =1.9 V @ IC = 20 A

• High Input Impedance

• RoHS Complian

General Description:Using advanced field stop trench and shorted-anode technol-ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switchingapplications. The device can operate in parallel configurationwith exceptional avalanche capability. This device is designedfor induction heating and microwave oven.

Part Number:SMF33A-E3-08

Manufacturer : Vishay General Semiconductor - Diodes Division

Category : Circuit Protection TVS - Diodes

Description : TVS DIODE 33VWM 53.3VC SMF

Detailed Description: 53.3V Clamp 3.8A Ipp Tvs Diode Surface Mount DO-219AB (SMF)

FEATURES:

• 200 W peak pulse power capability with a 10/1000 μs waveform, repetition rate (duty cycle): 0.01 %

• Low profile package

• Wave and reflow solderable

• ESD immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge

• ESD capability according to AEC-Q101: human body model: class H3B: > 8 kV

• Low incremental surge resistance, excellent clamping capability

• “Low Noise” technology - very fast response time

• AEC-Q101 qualified available

• Compatible to SOD-123W package case outline or SOD-123F and SOD-123FL

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