Following is one order from our customer. We have great advantage on price and lead time.
Order Information:
Part Number:IHW30N160R2
Manufacturer : Infineon Technologies
Category :Discrete Semiconductor Products Transistors - IGBTs - Single
Description : IGBT 1600V 60A 312W TO247-3
Detailed Description : IGBT NPT, Trench Field Stop 1600 V 60 A 312 W Through Hole PG-TO247-3-1
Applications : Inductive Cooking / Soft Switching Applications
Features：
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
Part Number:BCM857BV
Manufacturer : Nexperia USA Inc.
Category :Discrete Semiconductor Products Transistors - Bipolar (BJT) - Arrays
Description : TRANS 2PNP 45V 0.1A SOT666
Detailed Description : Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 45V 100mA 175MHz 300mW Surface Mount SOT-666
Features:
• Current gain matching
• Base-emitter voltage matching
• Drop-in replacement for standard double transistors
Applications:
•Current mirror
• Differential amplifier
Part Number:PMEG4010AESBYL
Manufacturer : Nexperia USA Inc.
Category :Discrete Semiconductor Products Diodes - Rectifiers - Single
Description : DIODE SCHOTTKY 40V 1A SOD993
Detailed Description :Diode Schottky 40 V 1A Surface Mount DSN1006-2
Applications:
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
General description:Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package.
Features and benefits:
• Average forward current: IF(AV) ≤ 1 A
• Reverse voltage: VR ≤ 40 V
• Low forward voltage, typical: VF = 435 mV
• Low reverse current, typical: IR = 325 µA
• Package height typ. 270 µm
Part Number:FGA20S140P
Manufacturer : FAIRCHILD
Category : Discrete Semiconductor Products Transistors - IGBTs - Single
Description : INSULATED GATE BIPOLAR TRANSISTO
Detailed Description: IGBT Trench Field Stop 1400 V 40 A 272 W Through Hole TO-3PN
Applications:Induction Heating, Microwave Oven
Features :
• High Speed Switching
• Low Saturation Voltage: VCE(sat) =1.9 V @ IC = 20 A
• High Input Impedance
• RoHS Complian
General Description:Using advanced field stop trench and shorted-anode technol-ogy, Fairchild’s shorted-anode trench IGBTs offer superior con-duction and switching performances for soft switchingapplications. The device can operate in parallel configurationwith exceptional avalanche capability. This device is designedfor induction heating and microwave oven.
Part Number:SMF33A-E3-08
Manufacturer : Vishay General Semiconductor - Diodes Division
Category : Circuit Protection TVS - Diodes
Description : TVS DIODE 33VWM 53.3VC SMF
Detailed Description: 53.3V Clamp 3.8A Ipp Tvs Diode Surface Mount DO-219AB (SMF)
FEATURES:
• 200 W peak pulse power capability with a 10/1000 μs waveform, repetition rate (duty cycle): 0.01 %
• Low profile package
• Wave and reflow solderable
• ESD immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge
• ESD capability according to AEC-Q101: human body model: class H3B: > 8 kV
• Low incremental surge resistance, excellent clamping capability
• “Low Noise” technology - very fast response time
• AEC-Q101 qualified available
• Compatible to SOD-123W package case outline or SOD-123F and SOD-123FL
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