A new customer from Germany gave us this order, including integrated circuits and transistors.
Part Number：BC847C
Manufacturer：Nexperia USA Inc.
Category ：Discrete Semiconductor Product Transistors - Bipolar (BJT) - Single
Description ：NOW NEXPERIA BC847C - SMALL SIGN
Applications：General-purpose switching and amplification
Features and benefits：General-purpose transistors / SMD plastic packages / Three different gain selections / AEC-Q101 qualified
Part Number：IR4427STRPBF
Manufacturer：Infineon Technologies
Category ：Integrated Circuits (ICs) Power Management (PMIC) Gate Drivers
Description ：IC GATE DRVR LOW-SIDE 8SOIC
Gate Type：IGBT, N-Channel MOSFET
Features：Gate drive supply range from 6 to 20V / CMOS Schmitt-triggered inputs / Matched propagation delay for both channels / Outputs out of phase with inputs (IR4426) / Outputs in phase with inputs (IR4427) / OutputA out of phase with inputA and OutputB in phase with inputB (IR4428) / Also available LEAD-FREE
The IR4426/IR4427/IR4428 (S) is a low voltage, high speed power MOSFET and IGBT driver. Proprietary latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays between two channels are matched.
Part Number：L6225DTR
Manufacturer：STMicroelectronics
Category ：Integrated Circuits (ICs) Power Management (PMIC) Motor Drivers, Controllers
Description ：IC MTR DRVR BIPOLAR 8-52V 20SOIC
Typical Applications：BIPOLAR STEPPER MOTOR / DUAL OR QUAD DC MOTOR
The L6225 is a DMOS Dual Full Bridge designed for motor control applications, realized in MultiPower BCD technology, which combines isolated DMOS Power Transistors with CMOS and bipolar circuits on the same chip. Available in PowerDIP20 (16+2+2),
PowerSO20 and SO20(16+2+2) packages, the L6225 features a non-dissipative protection of the high side PowerMOSFETs and thermal shutdown.
Part Number：LMV324IDR
Manufacturer：Texas Instruments
Category ：Integrated Circuits (ICs) Linear Amplifiers Instrumentation, OP Amps, Buffer Amps
Description ：General Purpose Amplifier 4 Circuit Rail-to-Rail 14-SOIC
Applications：
Desktop PCs
HVAC: Heating, Ventilating, and Air Conditioning
Motor Control: AC Induction
Netbooks
Portable Media Players
Power: Telecom DC/DC Module: Digital
Pro Audio Mixers
Refrigerators
Washing Machines: High-End and Low-End
The LMV324 device is single, dual, and quad low-voltage (2.7 V to 5.5 V) operational amplifiers with rail-to-rail output swing. These devices are the most cost- effective solutions for applications where low-voltage operation, space saving, and low cost are needed.
These amplifiers are designed specifically for low-voltage (2.7 V to 5 V) operation, with performance specifications meeting or exceeding the LM324 device that operate from 5 V to 30 V. With package sizes down to one-half the size of the DBV (SOT-23) package, these devices can be used for a variety of applications.
Part Number：MT46H32M16LFBF-5IT:C
Manufacturer：Micron Technology Inc.
Category ：Integrated Circuits (ICs) Memory
Description ：SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 200 MHz 5 ns 60-VFBGA (8x9)
The 512Mb Mobile low-power DDR SDRAM is a high-speed CMOS, dynamic randomaccess memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. Each of the x16’s 134,217,728-bit banks is organized as 8192 rows by 1024 columns by 16 bits. Each of the x32’s 134,217,728-bit banks is organized as 8192 rows by 512 columns by 32 bits.
The Mobile LPDDR SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O. Single read or write access for the device consists of a single 2n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and two corresponding n-bit-wide, one-half-clockcycle data transfers at the I/O.
A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the device during READs and by the memory controller during WRITEs. DQS is edge-aligned with data for READs and center-aligned with data for WRITEs. The x16 device has two data strobes, one for the lower byte and one for the upper byte; the x32 device has four data strobes, one per byte.
The LPDDR device operates from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. Commands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK.
Read and write accesses to the device are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.
The device provides for programmable READ or WRITE burst lengths of 2, 4, 8, or 16. An auto precharge function can be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.
As with standard DDR SDRAM, the pipelined, multibank architecture of LPDDR supports concurrent operation, thereby providing high effective bandwidth by hiding row precharge and activation time.
An auto refresh mode is provided, along with a power-saving power-down mode. Deep
power-down mode is offered to achieve maximum power reduction by eliminating the power of the memory array. Data will not be retained after the device enters deep power-down mode.
Two self refresh features, temperature-compensated self refresh (TCSR) and partial-array self refresh (PASR), offer additional power savings. TCSR is controlled by the automatic on-chip temperature sensor. PASR can be customized using the extended mode register settings. The two features can be combined to achieve even greater power savings.
The DLL that is typically used on standard DDR devices is not necessary on LPDDR devices. It has been omitted to save power.
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