Recently, Japanese electronic component manufacturers ROHM and TOSHIBA issued a joint statement stating that the two parties will cooperate to invest a huge amount of 388.3 billion yen (approximately US$2.7 billion in total) for the joint production of power chips. This is the first collaboration since ROHM participated in the US$14 billion acquisition of TOSHIBA
It is reported that the cooperation plan between the two parties in power semiconductor manufacturing and increasing mass production has been supported by the Japanese Ministry of Economic Affairs. The two parties will receive a total of 129.4 billion yen (US$902 million, equivalent to one-third of the total investment) in subsidies to Support its domestic production of power semiconductors in Japan
According to the statement, ROHM and TOSHIBA will make intensive investments in silicon carbide (Sic) and silicon (Si) power devices respectively to effectively enhance their supply capabilities and achieve complementary use of each other's production capabilities.
Among them, ROHM plans to invest most of the investment, 289.2 billion yen, in its leading Sic (silicon carbide) wafer production. It plans to build a new factory in Miyazaki Prefecture, southern Kyushu Island.
Toshiba plans to invest 99.1 billion yen to build a cutting-edge 300mm wafer manufacturing plant in Ishikawa Prefecture, central Japan.
Major manufacturers deploy power semiconductors
In the field of power semiconductors, Japanese manufacturers including Toshiba, ROHM, Renesas, Mitsubishi Electric, Fuji Electric, and Resonac have strong global competitiveness. In recent years, the above manufacturers have been competing in the field of power semiconductors.
It is reported that Rohm plans to inject 510 billion yen into Sic by the end of March 2028 to develop the silicon carbide industry chain. The goal is to increase Sic wafer production capacity by 35 times by 2030 compared with 2021. It is reported that by 2025, Rohm Sic production capacity will increase by 6.5 times
Toshiba Electronics revealed in February that it will begin mass production of silicon carbide power semiconductors in 2025
Renesas will start producing next-generation power semiconductor products using silicon carbide (Sic) to reduce losses in 2025. Mass production is planned at the Takasaki Factory in Gunma Prefecture, which currently produces silicon-based power semiconductors, but the specific investment amount and production scale have not yet been determined.
Mitsubishi Electric announced in March this year that it would double its previously announced investment plan to approximately 260 billion yen by March 2026, mainly for the construction of new wafer fabs to increase silicon carbide (Sic ) Production of power semiconductors. In July, Mitsubishi Electric announced that it had invested in Novel Crystal Technology, Inc. As the third-generation semiconductors represented by silicon carbide and gallium nitride gradually entered the stage of industrialization and accelerated volume, Mitsubishi Electric pressed the "quick start" to seize the opportunity. key"
Fuji Electric will begin increasing production in 2022. Its subsidiary Fuji Electric Tsugaru Semiconductor's factory will also introduce a production line for silicon carbide power semiconductors and will begin mass production in 2024.
Resonac, formerly known as Showa Denko, holds 25% of the global market share of silicon carbide (Sic) epitaxial wafers. The manufacturer plans to increase its monthly production capacity of SIC epitaxial wafers to 50,000 wafers (150 mm in diameter) by 2026, which is equivalent to about 5 times the current production capacity.
In addition, several chip manufacturers in the United States and Europe have recently announced investments of billions of dollars in building new silicon carbide fabs and R&D facilities to increase supply.
Onsemi said it is building the world's largest silicon carbide (Sic) production facility in Bucheon, Gyeonggi Province, South Korea, and aims to complete equipment installation in 2024, making Bucheon a global Sic production center. By 2025, the Bucheon factory's annual SIC semiconductor production capacity is expected to reach 1 million pieces, accounting for 35% to 40% of Onsemi's total output.
Wolfspeed said in February this year that it announced a strategic partnership with ZF Group. The two parties plan to establish a joint innovation laboratory to promote the advancement of silicon carbide systems and equipment technology in the fields of travel, industry and energy applications. The strategic partnership also includes a major investment by ZF to support the construction of the world's largest and most advanced 200mm silicon carbide wafer fab in Ensdorf, Germany
In June, it was reported that Wolfspeed had received US$2 billion in financing. The funds will be used to expand the company's two existing silicon carbide wafer production facilities in the United States and supply silicon carbide chips to Jaguar, Land Rover and other automobile manufacturers.
X-FAB announced in May this year plans to expand its foundry business in Lubbock, Texas, USA.
The investment in the first phase is US$200 million to provide the silicon carbide semiconductor output of the plant. According to market demand, more investment projects will be launched in the future.
In September this year, Bosch announced the acquisition of US chip manufacturer TSI Semiconductor to strengthen its silicon carbide supply chain in the Americas. Although terms of the deal have not been disclosed, Bosch has committed to invest approximately $1.5 billion in TSI's Roseville campus.
STMicroelectronics revealed plans to bring SIC wafer production in-house, a move it said will drive $5 billion in annual revenue by the end of the century
